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| 2SK3440 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3440 Switching Regulator, DC-DC Converter Applications Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 6.5 m (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 A (VDS = 60 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range (Note 3) DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 30 50 200 125 644 50 12.5 150 -55 to 150 Unit V V V A W mJ A mJ C C JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.00 Unit C/W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 50 V, Tch = 25C (initial), L = 350 H, RG = 25 , IAR = 50 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. 4 1 2 3 1 2002-03-04 2SK3440 Electrical Characteristics (Note 4) (Tc = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 48 V, VGS = 10 V, ID = 50 A - Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 ID = 25 A VOUT RL = 1.2 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 25 A VDS = 10 V, ID = 25 A Min 60 2.0 15 Typ. 6.5 30 3700 280 1320 12 30 12 50 55 35 20 Max 10 100 4.0 8 ns nC nC nC Unit A A V V m S pF pF pF VDD 30 V - VIN: Duty < 1%, tw = 10 s = Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin. (However, while switching times are measured, please don't connect and ground it.) Source-Drain Ratings and Characteristics (Note 5) (Tc = 25C) Characteristics Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1, Note 5) Symbol IDR1 IDRP1 IDR2 IDRP2 VDS2F trr Qrr Test Condition IDR = 50 A, VGS = 0 V IDR = 50 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 70 123 Max 50 200 1 4 -1.5 Unit A A A A V ns nC Note 1: Please use devices on condition that the channel temperatureis below 150C. Note 5: drain, flowing current value between the S2 pin, open the S1 pin drain, flowing current value between the S1 pin, open the S2 pin Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin. Marking Lot Number K3440 Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-03-04 2SK3440 ID - VDS 100 Common source Tc = 25C Pulse test 15 10 8.5 200 8 160 15 10 ID - VDS Common source Tc = 25C, Pulse test 8.5 80 (A) (A) 7.5 60 ID ID 8 120 7.5 80 7 40 6.5 6 VGS = 5.5 V 0 0 1 2 3 4 5 Drain current 40 6.5 20 6 VGS = 5.5 V 0 0 0.2 0.4 0.6 0.8 1.0 Drain-source voltage VDS (V) Drain current 7 Drain-source voltage VDS (V) ID - VGS 100 Common source VDS = 10 V Pulse test 1.2 VDS - VGS Common source Tc = 25C Pulse test 80 (A) Drain-source voltage VDS (V) 1 0.8 ID Drain current 60 0.6 40 0.4 ID = 50 A 0.2 25 12 20 100 Tc = -55C 25 0 0 2 4 6 8 10 0 0 4 8 12 16 20 24 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 100 Common source VDS = 10 V Pulse test Tc = -55C 25C 100C 100 Common source Tc = 25C Pulse test RDS (ON) - ID Yfs (S) Forward transfer admittance 10 Drain-source on resistance RDS (ON) (m) 10 VGS = 10 V 15 1 1 10 100 1 10 100 Drain current ID (A) Drain current ID (A) 3 2002-03-04 2SK3440 RDS (ON) - Tc 14 12 Common source VGS = 10 V Pulse test 1000 Common source Tc = 25C Pulse test IDR - VDS Drain-source on resistance RDS (ON) (m ) ID = 50 A 25 12 (A) Drain reverse current IDR 100 10 10 8 6 4 2 0 -80 1 3 1 -0.6 10 -40 0 40 80 120 160 0.1 0 -0.2 VGS = 0 V -0.8 -1 -1.2 -1.4 -0.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 6 Vth - Tc Common source VDS = 10 V ID = 1 mA Pulse test Gate threshold voltage Vth (V) Ciss 5 (pF) 1000 Coss 4 C 3 Capacitance 100 Common source VGS = 0 V f = 1 MHz Tc = 25C 10 0.1 1 10 Crss 2 1 0 -80 100 -40 0 40 80 120 160 Case temperature Tc (C) Drain-source voltage VDS (V) PD - Tc 200 100 Dynamic input/output characteristics Common source ID = 50 A Tc = 25C Pulse test VDS = 12 V VDS 40 VGS 20 4 24 48 8 20 (W) (V) 160 80 16 PD Drain-source voltage VDS Drain power dissipation 80 40 10 0 40 80 120 160 200 0 0 20 40 60 80 100 0 120 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-03-04 Gate-source voltage 120 60 12 VGS (V) 2SK3440 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.00001 0.0001 0.001 0.01 0.1 PDM t T Duty = t/T Rth (ch-c) = 1.0C/W 1 10 Pulse width tw (s) Safe operating area 500 300 ID max (pulsed) * 1000 EAS - Tch (mJ) Avalanche energy EAS 100 s * 1 ms * 800 100 (A) 50 30 ID max (continuous) 600 ID 400 Drain current 200 10 5 DC operation 0 25 *: Single nonrepetitive pulse 3 Tc = 25C Curves must be derated linearly with increase in temperature 1 1 3 10 30 100 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V 0V BVDSS IAR VDD VDS Waveform AS = 1 B VDSS L I2 B 2 VDSS - VDD Test circuit RG = 25 VDD = 50 V, L = 350 H 5 2002-03-04 2SK3440 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-03-04 |
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